SiC Power Devices & Modules

Silicon Carbide Discrete MOSFETS

Create power conversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.

Coherent SIC MOSFETs provide superior energy efficiency and performance over existing silicon devices are the only product available with a 200°C junction temperature capability, along with industry-leading avalanche ratings and superior RDS(on).

Silicon Carbide MOSFETs Features

  • High voltage and low RDS(on) up to 200°C.

  • Fast switching enabled by ultra-low gate resistance. 

  • Very low, temperature invariant switching losses.

  • Avalanche ruggedness superior to silicon 

  • Fast recovery body diode for synchronous rectification.