SiC Power Devices & Modules
Silicon Carbide MOSFETs
Create power conversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.
Coherent SIC MOSFETs provide superior energy efficiency and performance over existing silicon devices are the only product available with a 200°C junction temperature capability, along with industry-leading avalanche ratings and superior RDS(on).
Silicon Carbide MOSFETs Features
High voltage and low RDS(on) up to 200°C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature invariant switching losses.
Avalanche ruggedness superior to silicon
Fast recovery body diode for synchronous rectification.
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Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
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Coherent supplies optics and optical fabrication technology for one of the most ambitious astronomy projects ever conceived – the Thirty Meter Telescope.
