Materials

Reaction-Bonded SiC

Source RB-SiC components of nearly any size or shape, customized as needed, including high flatness, large infiltration depth, and internal cooling channels.

RB-SiC offers a unique combination of physical characteristics - high-temperature resistance, low CTE, chemical inertness, high strength, and strength-to-weight ratio - for applications in high-voltage electronics, semiconductor tooling, and more.

Reaction Bonded SiC Properties

Choose from a range of RB-SiC substrate materials optimized for various mechanical, thermal, and electrical characteristics.

Property

SSC-702

SSC-802

SSC-902

SSC-FG

(Fine-Grained SiSiC)

HSC-702

(Si/SiC+Al)

TSC-15

(Si/SiC + Ti)

RBBC-751 

(B4C/SiC/Si)

SSC-HTC

Poisson’s Ratio

0.18

0.18

0.18

0.18

0.19

0.19

0.18

0.2

Young’s Modulus (GPa) [E]

350

380

410

330

330

390

400

373

CTE, 20-100ºC (ppm/K) [α]

2.9

2.9

2.7

3

4.4

3

4.8

2.9

Thermal Cond. (W/m-K) [k]

170

180

190

150

200

210

52

402

SpecificHeat (J/kg-K)

680

670

660

680

700

670

890

670

Ult. Tensile Strength (MPa)

N/A

N/A

N/A

N/A

N/A

N/A

N/A

-

Flexural Strength (MPa)

270

280

280

350

275

225

280

265

Fracture Toughness (Mpa-m1/2)

4

4

4

4

5

5

5

3.5

Damping Factor (% Zeta)

-

0.12

-

-

-

-

-

-

Specific Stiffness (E/ρ)

119

127

131

112

109

125

156

-

Thermal Stability (k/α)

59

62

70

50

45

70

11

-