Materials

Reaction-Bonded SiC

Reaction Bonded Ceramics

Source RB-SiC components of nearly any size or shape, customized as needed, including high flatness, large infiltration depth, and internal cooling channels.

RB-SiC offers a unique combination of physical characteristics - high-temperature resistance, low CTE, chemical inertness, high strength, and strength-to-weight ratio - for applications in high-voltage electronics, semiconductor tooling, and more.

Reaction Bonded SiC Properties

Choose from a range of RB-SiC substrate materials optimized for various mechanical, thermal, and electrical characteristics.

Datasheets

Property 

SSC-702

SSC-802

SSC-902

SSC-HTC

SSC-FG

(Fine-Grained SiSiC)

HSC-702

(Si/SiC+Al)

TSC-15

(Si/SiC + Ti)

RBBC-751 

(B4C/SiC/Si)

SiCAM 700

SiCAM 800

SiC Content (Vol. %)

      

78

        

70

80

Si Content (Vol. %)

      

~20

        

30

20

Bulk Density (g/cc)

2.95

3.00

3.12

3.02

2.94

3.01

3.13

2.56

2.95

3.00

Young’s Modulus (GPa) [E]

350

380

410

373

330

330

390

400

345

365

Poisson’s Ratio

0.18

0.18

0.18

0.2

0.18

0.19

0.19

0.18

0.185

0.185

Flexural Strength (MPa)

270

280

280

265

350

275

225

280

    

Fracture Toughness (Mpa-m1/2)

4

4

4

3.5

4

5

5

5

    

CTE (25-100°C) (ppm/K)

2.9

2.9

2.7

2.9

3

4.4

3

4.8

3.2

3.1

Thermal Cond. (W/mK)

170

180

190

402

150

200

210

52

177

185

Specific Heat (J/kg-K)

680

670

660

670

680

700

670

890

686

674

Ult. Tensile Strength (MPa)

N/A

N/A

N/A

-

N/A

N/A

N/A

N/A

    

Damping Factor (% Zeta)

-

0.12

-

-

-

-

-

-

    

Specific Stiffness (E/ρ)

119

127

131

-

112

109

125

156

116.9

121.7

Thermal Stability (k/α)

59

62

70

-

50

45

70

11

55.3

59.7

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