Materials
Reaction-Bonded SiC
Source RB-SiC components of nearly any size or shape, customized as needed, including high flatness, large infiltration depth, and internal cooling channels.
RB-SiC offers a unique combination of physical characteristics - high-temperature resistance, low CTE, chemical inertness, high strength, and strength-to-weight ratio - for applications in high-voltage electronics, semiconductor tooling, and more.
Reaction Bonded SiC Properties
Choose from a range of RB-SiC substrate materials optimized for various mechanical, thermal, and electrical characteristics.
Property |
SSC-702 |
SSC-802 |
SSC-902 |
SSC-FG (Fine-Grained SiSiC) |
HSC-702 (Si/SiC+Al) |
TSC-15 (Si/SiC + Ti) |
RBBC-751 (B4C/SiC/Si) |
SSC-HTC |
Poisson’s Ratio |
0.18 |
0.18 |
0.18 |
0.18 |
0.19 |
0.19 |
0.18 |
0.2 |
Young’s Modulus (GPa) [E] |
350 |
380 |
410 |
330 |
330 |
390 |
400 |
373 |
CTE, 20-100ºC (ppm/K) [α] |
2.9 |
2.9 |
2.7 |
3 |
4.4 |
3 |
4.8 |
2.9 |
Thermal Cond. (W/m-K) [k] |
170 |
180 |
190 |
150 |
200 |
210 |
52 |
402 |
SpecificHeat (J/kg-K) |
680 |
670 |
660 |
680 |
700 |
670 |
890 |
670 |
Ult. Tensile Strength (MPa) |
N/A |
N/A |
N/A |
N/A |
N/A |
N/A |
N/A |
- |
Flexural Strength (MPa) |
270 |
280 |
280 |
350 |
275 |
225 |
280 |
265 |
Fracture Toughness (Mpa-m1/2) |
4 |
4 |
4 |
4 |
5 |
5 |
5 |
3.5 |
Damping Factor (% Zeta) |
- |
0.12 |
- |
- |
- |
- |
- |
- |
Specific Stiffness (E/ρ) |
119 |
127 |
131 |
112 |
109 |
125 |
156 |
- |
Thermal Stability (k/α) |
59 |
62 |
70 |
50 |
45 |
70 |
11 |
- |
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