シリコンカーバイドMOSFETの特徴
高電圧、低RDS(on) 200℃まで対応
超低ゲート抵抗による高速スイッチングが可能。
非常に低い、温度不変のスイッチング損失。
シリコンより優れたアバランシェ耐久性
同期整流用高速回復ボディダイオード。
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