碳化硅 MOSFET 特性
高电压和低 RDS(on),高达 200°C。
通过超低栅极电阻实现快速开关。
非常低的、温度不变的开关损耗。
雪崩鲁棒性优于硅
通过快恢复体二极管实现同步整流。
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