SiC 功率器件和模块
碳化硅 MOSFET
利用我们的高电压、高开关频率 SiC MOSFET 创建具有更高效率和更低工作温度的电源转换系统。
Coherent高意 的 SiC MOSFET 能够比现有的硅器件提供更加出色的能效和性能，是唯一具有 200°C 结温能力的产品，并具有业界经认可的雪崩额定值和卓越的 RDS(on)。
碳化硅 MOSFET 特性
高电压和低 RDS(on)，高达 200°C。
通过超低栅极电阻实现快速开关。
非常低的、温度不变的开关损耗。
雪崩鲁棒性优于硅
通过快恢复体二极管实现同步整流。
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