Networking
1X4 Photodiode Arrays for NRZ or PAM4
Use these 13XX nm photodiode array chips in pluggable transceivers configured for 28 Gbps NRZ or 56 Gbps PAM4, and benefit from their low dark current and high reliability.
These compact 1X4 chips feature topside G-S-G pads making them very easy to integrate in 4-channel pluggable transceivers. They utilize a top-illuminated design with optical (illumination) aperture diameter of 20 μm and a 250 μm pitch spacing.
High-Speed Photodiode Arrays
Use these chips in fiber-optic transceivers, receivers, and transponders for 25G/50G/100G Ethernet applications, as well as single-mode datacom and telecom.
Key Features
Die-level self-hermetic
Responds to 1260 nm to 1620 nm
Low capacitance of 80 fF
Low dark current and high reliability
Operating temperature -40 °C to 85 °C
Designed to GR-468 for use in non-hermetic packages
Top anode and backside cathode configuration
