Edge-illuminated Monitor Photodiode (EMPD) Chips
Use these self-hermetic devices for channel monitoring anywhere across the 1270-1620 nm wavelength range with a typical responsivity of 0.8 A/W at 1310 nm.
These compact edge-illuminated InGaAs monitor photodiode chips feature a nominal active area of 210 μm x 210 μm and an operating temperature range -40 °C to 90 °C. This simplifies their integration in transceivers, transponders, and other devices.
Edge-Illuminated Monitor Photodiode (EMPD) Chips
Use these GR-468 qualified chips in non-hermetic packages to create high-performance communications components with high reliability and extremely low dark current.
Large active area - nominally 210 μm x 210 μm
Operating temperature -40 °C to 90 °C
Qualified according to GR-468 for use in non-hermetic packages
Extremely low dark current with high reliability
Response to 1270-1620nm with typical responsivity of 0.8 A/W at 1310nm
Featured Success Story
Laser Framework Makes a Mark in Siemens’ Digital Factory
Coherent applications development support and Coherent Laser FrameWork software enable Siemens to successfully implement their ID Link manufacturing program.
Fabricating & Metalworking
Get exactly the right solution to your specific laser fabrication needs while delivering process quality and efficiency to metal and non-metal fabricating.
Weld and harden automotive powertrain components with lasers that eliminate distortion, reduce spatter, and are easily automated and integrated into production.