SiC Substrates & Epitaxy
Accelerate time-to-market, reduce costs, and improve device performance by building on high-performance SiC epitaxial wafers from Coherent in up to 200 mm diameter.
Coherent offers a total SiC materials solution with options for thick epilayers with or without buffer, low-doped layers, multilayer structures, p-n junctions, embedded/buried structures and contact layers, and more. We support R&D to volume production.
SiC Epitaxy Capabilities Highlights
State-of-the-art SiC epitaxy technology
Record-low defect density through efficient buffer-layer technology
Prevents nucleation of crystalline defects at growth start
BPD to TED conversion rate >99.8% → 1 BPD per cm2
Enables bipolar SiC device technology
Best-in-class layer homogeneity with LPE PE106
Adjustable lateral gas flows
High growth rate of 40 µm/h using TCS as a silicon precursor
Thick layer growth of 150 µm and more
Low doping concentrations of 1×1014/cm3
Enables >15 kV SiC device technology
SiC Circuitry Makes EVs Better
Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
Thirty Meter Telescope International Observatory: Optics From Coherent Give Telescopes a Bright Future
Coherent supplies optics and optical fabrication technology for one of the most ambitious astronomy projects ever conceived – the Thirty Meter Telescope.