SiCエピタキシー機能のハイライト
最先端のSiCエピタキシー技術
効率的なバッファ層技術による記録的な低欠陥密度
成長開始時の結晶欠陥の核形成を防止
BPDからTEDへの変換率 > 99.8% → 1 BPD/cm2
バイポーラSiCデバイス技術を実現
LPE PE106によるクラス最高の層均一性
調整可能な横方向のガス流
シリコン前駆体としてTCSを使用した、40 µm/hの高い成長速度
150 μm以上の厚膜成長
1×1014/cm3の低ドーピング濃度
15 kV超のSiCデバイス技術を実現
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