SiC Substrates & Epitaxy

SiC for Power Electronics

Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used in electric and hybrid vehicles, and aerospace applications.

Our conductive SiC substrates combine low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.

n-type Silicon Carbide Material Properties

Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.

n-type Silicon Carbide Material Properties

Physical Characteristics

Structure

Hexagonal, Single Crystal

Diameter

Up to 200 mm

Grades

Prime, Development, Mechanical

Thermal Properties

Thermal Conductivity

370 (W/mK) at room temperature

Thermal Expansion Coefficient

4.5 x 10-6/K

Specific Heat (25°C)

0.71 (J/g°C)

Additional Key Properties of Coherent SiC Substrates (typical values)

Parameter

N-type

Polytype

4H

Dopant

Nitrogen

Resistivity

> 1019 Ohm -cm

Orientation

4° off-axis

Roughness, Ra

<5Å

Dislocation density

~3,000 cm-2

Micropipe density

< 10cm-2