Datasheet

Diode Lasers

High-Power GaSb-Based MIR Lasers

Product image of High-Power GaSb-Based MIR Lasers

Coherent offers a complete mid-infrared laser product line in the entire spectral range from 1800 nm to 2300 nm, based on the unique know-how in mid-infrared chip technology. Applications are in the fields of medical, illumination, materials processing, direct infrared counter-measure (DIRCM) and pumping of mid-infrared solid-state and disc lasers. The broad-area, gain-guided lasers are based on the (AlGaIn)(AsSb) material system, epitaxially grown on GaSb substrates by multi-wafer MBE.

The single emitters are mounted onto C-Mounts and feature high output powers in combination with high wall-plug efficiencies as well as a fast-axis beam divergence as low as 44° FWHM due to an innovative waveguide design.

Features

  • Nominal CW output up to 1.2 W
  • Highly efficient and reliable
  • Divergence in the fast direction of 44° (FWHM)
  • Emitter stripe width of 100 μm or 150 µm
  • C-Mount or customized packaging
  • Passive cooling
  • Also available as unmounted chips or bars

Applications

  • Dermatological treatments
  • Protein coagulation, laser surgery
  • Medical diagnostics and sensing, blood and glucose
  • Infrared countermeasure
  • Direct pumping of solid-state or fiber lasers for the 2-4 µm regime
  • Transparent plastic welding without additives
  • Wind velocity, atmospheric gases, trace gas analysis
  • Rapid laser drying, aqueous varnish processing
Parameter BA-1940-1200-SE
Package Broad Area (Multi Mode)
OPTICAL PARAMETERS1
CW - Nominal Output Power (mW) 1200
Nominal Output Power (W) 1.2
Center Wavelength (@ 20 °C at 3A cw)1 (nm) 1940
Center Wavelength Variation (@ 20 °C) (nm) ±20
Wavelength Temperature Shift with Current (nm/A) 8
Wavelength Temperature Coefficient (nm/K) 1.2
Divergence Parallel (FWHM) (°C) ≤14
Divergence Perpendicular (FWHM) (°C) ≤47
Mode Multimode
DESIGN PARAMETERS
Stripe Width (μm) 150
Cavity Length (μm) 1500
Chip Width (μm) 500
Emitter Height (μm) 130 to 140
Reflectivity Front Facet (%) 3
Reflectivity Rear Facet (%) ≥95
ELECTRICAL PARAMETERS
Typical Operation Current (A) 3.9
Maximum Operation Current (A) 4.5
Typical Efficiency at Operation Current (%) 20
Maximum Operation Voltage (V) 1.6
Polarization TE
THERMAL PARAMETERS
Operating Temperature (°C) 15 - 40
Recommended Heat Sink Temperature (°C) 20
Storage Temperature (°C) -20 to +60
Operating and Storage Conditions Non-Condensing Atmosphere
OTHER PARAMETERS
Heat Sink Type C-Mount
Cathode (-) Wire Flag (see also packaging drawings)
Anode (+) Base Plate (see also packaging drawings)
RoHS 2002/95EC Compliant Yes

Notes:
1. Other wavelength on request
Safety
This is a laser class IV product according to IEC -Standard International Commission (Publication 825, 1993). The laser light emitted from this laser diode is invisible and/or visible and is harmful to the human eye. The safety regulations for eye and personell protection included in the IEC Standard must be observed to avoid any harm to operating personell. Avoid direct exposure and looking into the laser diode, into the collimated beam or into the fiber when it is linked to the module.

Storage and Shipping
Store and ship the diode laser with shortened electrical contacts in a clean and dry atmosphere and in a temperture range of 0°C to 60°C.

Operation and Handling
Diode lasers are extremely sensitive to over-voltage. Take extreme precaution to avoid electrostatic charges. Precautions against spiking during switching on and off the power supply must be assured. Correct polarity of power supply must be assured. During handling personell has to wear wrist straps. Grounded work surfaces and additional antistatic techniques are mandatory during handling. Device failure and safety hazard are caused by operation in excess of maximum ratings. Exceeding output power and temperature specification will result in accelerated device ageing.

Do not mount via any paste-like media!