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MicroLEDs - Laser processes for display production

High energy, ultraviolet laser beams enable the UVtransfer process for display fabrication, specifically for laser lift-off (LLO) and laser induced transfer (LIFT) as well as pixel repair. Read how UVtransfer ensures that these mass transfer and placement production steps will remain future-proof as die dimensions continue to shrink. Plus, the process offers the advantage of compatibility with various repair schemes to accomodate anticipated realistic die yields.

MicroLEDs (µLEDs) represent an exciting emerging device type with tremendous potential for future displays. Typically based on gallium nitride (GaN), these devices currently have dimensions in the 20-50 µm range, with expectations that they will shrink to 10 µm and smaller. Using existing GaN fabrication technology on sapphire wafer growth substrates, µLEDs can be created in very high densities with street widths of a few microns.

The combination of micron dimensions, high brightness and high fabrication density can expand the display market beyond that presently enabled by OLED and LCD technologies. For instance, µLEDs can be used to create miniaturized (e.g., <1”), high definition displays for AR/VR applications. And, at the other end of the size spectrum, they support very large displays for indoor and outdoor use.

Such large displays can be fabricated economically from µLEDs, because as die size shrinks, the number of dies that be grown on a given sized wafer increases significantly. Consequently, for large displays, where pixel pitch is much larger than the die dimensions, the main display cost driver becomes the total number of pixels. This is in contrast to OLEDs and other technologies, where cost scales with total display area.

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