SiC基板とエピタキシー
RFエレクトロニクス用SiC
当社の高品質半絶縁性SiC基板を使用して、GaN-on-SiC RFパワーアンプやその他のRFおよびマイクロ波デバイスの生産を拡大してください。
Coherentは、大口径の半絶縁性SiC基板開発のパイオニアであり、低電力損失、高周波動作、優れた熱安定性を備えたコンポーネントの製造を可能にする高抵抗材料を提供しています。
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半絶縁性シリコンカーバイドの材料特性
Coherentは、お客様がデバイスの性能向上とコスト削減を実現できるよう、継続的に材料の品質を改善し、基板の直径を拡大しています。
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SiC Circuitry Makes EVs Better
Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
Featured Blog
Thirty Meter Telescope International Observatory: Optics From Coherent Give Telescopes a Bright Future
Coherent supplies optics and optical fabrication technology for one of the most ambitious astronomy projects ever conceived – the Thirty Meter Telescope.
