SiC基板とエピタキシー
パワーエレクトロニクス用SiC
電気自動車やハイブリッド車、航空宇宙用途に使用される高温・高周波パワーエレクトロニクス用のMOSFET、IGBT、その他のコンポーネントを製造します。
当社の導電性SiC基板は、低抵抗率、低欠陥密度、高均質性、優れた結晶品質、高熱伝導性を兼ね備えており、低電力損失、高周波動作、優れた熱安定性を備えたデバイスを実現します。
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n型シリコンカーバイドの材料特性
Coherentは、お客様がデバイスの性能向上とコスト削減を実現できるよう、継続的に材料の品質を改善し、基板の直径を拡大しています。
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