SiC 衬底和外延片
射频电子器件中的 SiC
利用我们高质量的半绝缘 SiC 衬底扩大 GaN-on-SiC 射频功率放大器以及其他射频和微波器件的生产规模。
Coherent 高意率先开发出了大直径、半绝缘 SiC 衬底，并提供高电阻率材料，以支持制造低功耗、高频且热稳定性良好的组件。
By providing your information and clicking ‘Subscribe’, you opt-in to receiving periodic email marketing communications from Coherent Corp. and understand that your personal data will be processed in accordance with our Privacy Policy and that our Terms apply. You may opt-out of marketing emails sent by us at any time by clicking the unsubscribe link in any marketing email you receive.
半绝缘碳化硅材料特性
Coherent 高意不断提高材料质量并增加衬底直径，使我们的客户能够提高设备性能并降低成本。
相关产品
Featured Blog
SiC Circuitry Makes EVs Better
Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
Featured Blog
Thirty Meter Telescope International Observatory: Optics From Coherent Give Telescopes a Bright Future
Coherent supplies optics and optical fabrication technology for one of the most ambitious astronomy projects ever conceived – the Thirty Meter Telescope.
