碳化硅功率模块特性
高度可靠的 GE SiC MOSFET 器件
低 RDS(on)(3.1 mΩ – 仅器件)
低杂散电感 (1 nH)
SiC 芯片可耐受 200°C 高温
在整个运行期间具有超低开关损耗
反向恢复最小的体二极管
集成式温度传感
专用 DESAT 引脚和开尔文源极引脚
AlSiC 衬底和 Si3N4 AMB 衬底
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