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100 Gbps PAM4 DFB 激光二极管芯片

1300 nm 28 Gbps NRZ and 56 Gbps PAM4 CWDM4 DFB Laser Diode Chips

在基于 NRZ 或 PAM4（四级）调制的高速无制冷光模块中使用这些 13XX nm 激光二极管芯片，适用于所有四种 O 频段 CWDM 波长。

这些紧凑型芯片工作温度范围宽（0°C 至 +85°C），且采用顶部阳极和背面阴极配置，因此可以非常轻松地集成到可插拔光模块中。它们可靠性高并且完全符合 RoHS 标准。

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CWDM DFB 激光二极管芯片

在千兆位以太网和存储区域网络以及 5G 无线前传数据链路中使用这些芯片。它们按照 GR-468 标准设计，用于非气密封装。

关键特性

非常适合无制冷 100 Gbps PAM 4

按照 GR-468 标准设计，用于非气密封装
顶部阳极和背面阴极配置
符合 RoHS
可用波长 - CWDM4 1270 nm 至 1330 nm

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