100 Gbps PAM4 DFB Laser Diode Chips
Use these 13XX nm laser diode chips in high-speed uncooled transceivers based on NRZ or PAM4 (four-level) modulation, available at all four O-band CWDM wavelengths.
These compact chips are very easy to integrate into pluggable transceivers thanks to their wide operating temperature range – from 0 to +85°C – and their top anode and backside cathode configuration. They feature high reliability and are fully RoHS compliant.
CWDM DFB Laser Diode Chips
Use these chips in Gigabit Ethernet and storage area networks and 5G wireless front-haul datalinks. They are designed to GR-468 for use in non-hermetic packages.
Ideal for uncooled 100 Gbps PAM 4
Designed to GR-468 for use in non-hermetic packages
Top anode and backside cathode configuration
Available wavelengths - CWDM4 1270 nm to 1330 nm
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