Materials
III-V RF Epitaxial Wafers
Improve efficiency, bandwidth, and reliability when making high-speed electronic components by starting with our consistent, high-performance, III-V epitaxial wafers.
Coherent has extensive capabilities for the development, design, and fabrication of advanced III-VI semiconductor epitaxial wafers. We enable you to easily bring next-generation technology to your application and support you with volume production.
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RF Wafer Capability
Source 2-inch to 6-inch wafers for wireless devices, datacenters, high-speed communication networks, and more.
Device Type |
Base Material |
Material Capability |
Wafer Diameter |
EpiHBT® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
InP |
InP/InGaAs |
up to 100mm |
|
EpiBiFET® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
InP |
InP/InGaAs, InP/InAlAs |
up to 100mm |
|
EpiFET® |
GaAs |
AlGaAs/GaAs, InGaP/GaAs |
up to 150mm |
InP |
InP/InGaAs, InP/InAlAs |
up to 100mm |
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