Materials
III-V Photonics Epitaxial Wafers
Deliver high-performance lasers, detectors, and other III-V semiconductor optoelectronic devices by fabricating with our consistent, high-quality epitaxial wafers.
The Coherent foundry employs a state-of-the-art MOCVD platform to deliver wafers which set a new standard for quality, performance, and yield. These meet the demands of challenging industrial, automotive, military, and communications applications.
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III-V Photonics Wafer Capability
Source 2-inch to 6-inch wafers fabricated in our 25,000 square foot, Class 1000 cleanroom facility.
Device Type |
Base Material |
Material Capability |
Wafer Diameter |
EpiLaser® (VCSEL, EEL, LED) |
GaAs |
AlGaAs/GaAs, InGaP/GaAs, InAlGaP |
up to 150mm |
InP |
InP/InGaAs, InGaAsP, InAlAs, InAlGaAs |
up to 100mm |
|
EpiDetector® (P-i-N, APD) |
GaAs |
AlGaAs/GaAs, InGaP/GaAs |
up to 150mm |
InP |
InP/InGaAs, InGaAsP, InAlGaAs |
up to 100mm |
|
EpiSolar™ (1J, 2J, 3J, 4J) |
GaAs, Ge |
InGaP/GaAs/InGaAs, InAlGaP, AlGaAs |
up to 150mm |
InP |
InP/InGaAs, InGaAsP, InAlAs, InAlGaAs |
up to 100mm |
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