The Coherent SEC8-808A/B/C-01 single emitter laser diode has been designed to provide the high output power, high coupling efficiency and high reliability required for both solid-state laser pumping and direct laser applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at extremely high output powers. The single emitter laser diodes are p-side down mounted on a submount that is attached to a C-mount.
Parameter | SEC8-808C-01 |
---|---|
Package | Chip on C-mount |
Operating Condition | Continious Wave (CW) |
CW Electrical and Optical Specification1 | |
Threshold Current (mA) | 1.2 (typ.) |
Operating Forward Current (A) | 8 (typ.) |
Operating Forward Voltage (V) | 1.9 (typ.) |
Output Power (W) | 8 (typ.) |
Center Wavelength (Centroid) (nm) | 808 |
Center Wavelength Range (nm) | 780 - 888 |
Center Wavelength Tolerance (nm) | ±2.5 |
Spectral Width (FWHM) (nm) | 2 (typ.) |
Wavelength Shift withTemperature (nm/K) | 0.3 (typ.) |
Beam Divergence, parallel to junction / slow axis (FWHM) (deg) | 9 |
Beam Divergence, perpendicular to junction / fast axis (FWHM) (deg) | 32 |
Slope Efficiency (W/A) | 1.1 (typ.) |
Conversion Efficiency (%) | 50 (typ.) |
Series Resisance (Ohm) | 0.03 (typ.) |
Polarization | TE |
Dimensions | |
Chip Width (µm) | 500 |
Chip Thickness (µm) | 150 |
Emitter Width (µm) | 190 |
Resonator Length (µm) | 3600 |
Package Width (mm) | 8 |
Package Length (mm) | 6.38 |
Package Thickness (mm) | 4.2 |
Package Height incl. Wire Bonds (mm) | 7.58 |
Miscellaneous | |
ROHS Compliance | compliant (China RoHS 2) |
Laser Safety | Class 4 Laser Product |
Comment | Manufactured in the Switzerland |
Notes:
1. Operating characteristics (BOL)
Conditions unless otherwise stated:
Submount temperature: 25 °C, CW operation
All specified values depend on mounting technology and operating conditions