SiC 衬底和外延片
射频电子器件中的 SiC
利用我们高质量的半绝缘 SiC 衬底扩大 GaN-on-SiC 射频功率放大器以及其他射频和微波器件的生产规模。
Coherent 高意率先开发出了大直径、半绝缘 SiC 衬底,并提供高电阻率材料,以支持制造低功耗、高频且热稳定性良好的组件。
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半绝缘碳化硅材料特性
Coherent 高意不断提高材料质量并增加衬底直径,使我们的客户能够提高设备性能并降低成本。
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