SiC 功率器件和模块
裸片碳化硅 MOSFET
利用 SiC 出色的效率、频率、温度和电压特性，为严苛的汽车应用打造电力电子器件。
Coherent 裸片 SiC MOSFET 使用经过验证的技术平台（由 GE 航空授权）来提供认可的 FIT 率。它们符合 AEC-Q101 标准，适合汽车应用，并提供唯一可选的200°C 结温产品。
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裸片碳化硅 MOSFET 特性
高电压和低 RDS(on)，高达 200°C。
通过超低栅极电阻实现快速开关。
非常低的、温度不变的开关损耗。
雪崩鲁棒性优于硅
通过快恢复体二极管实现同步整流。
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