Diode lasers based on our aluminum-free active area (AAA™) technology give you long-life performance in the 780 to 830 nm wavelenght range. Because there is no aluminum in the active area, there is no oxidation at the mirror facets—the leading failure mechanism in AlGaAs laser diodes.

High-powered and reliable, these cw single emitter devices are available in a variety of packages for many integration options. And the narrow beam divergence allows you to couple more of the laser energy more efficiently.

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For detailed specifications, see part number. Name Description 1.6W, 100µm S.E.x1.5mm-STD, 800 to 820 nm 780 to 830 nm C-Mount 1.6W, 100µmx1.5mm-FWHM<2.0 nm, 800 to 820 nm 780 to 830 HHL 1.6W, 100µmx1.5mm-FWHM<2.0 nm, 805 to 811 nm 780 to 830 nm HHL 1.6W, 100µmx1.5mm-FWHM<2.0nm, 805 to 811 nm 780 to 830 nm C-Mount 100µmx1.0-3.0W, 794 to 800 nm, 25C 780-830nm C-Mount 100µmx1.0-3.0W, 794 to 800 nm, 25C 780 to 830 nm HHL 100µmx1.5-1.6W, 797 to 803 nm, 25C 780 to 830 nm HHL 100µmx1.5-1.6W, 797 to 803 nm, 25C 780-830 nm, C-Mount 100µmx1.5-1.6W, 802 to 808 nm, 25C 780 to 830 nm C-Mount 100µmx1.5-1.6W, 802 to 808 nm, 25C 780 to 830 nm HHL 200µmx1.0-3.0W, 794 to 800 nm, 25C 780 to 830 nm HHL 200µmx1.0-3.0W, 794 to 800 nm, 25C 780-830 nm C-Mount 200µmx1.0-3.0W, 802 to 808 nm, 25C 780 to 830 nm C-Mount 200µmx1.0-3.0W, 807 to 813 nm, F<2.0-25C 780 to 830 C-Mount 200µmx1.0-3W, 802 to 808 nm, 25C 780 to 830 nm HHL 2W, 150µm S.E.x1.0mm, 805 to 811 nm 780 to 830 nm C-Mount 3.0W, 200µm S.E.x1.0mm-STD, 800 to 820 nm 780 to 830 nm C-Mount 3.0W, 200µmx1.0mm-FWHM<2.0nm, 805 to 811 nm 780 to 830 nm HHL 3.0W, 200µmx1.0mm-FWHM<3.0nm, 800 to 820 nm 780 to 830 nm HHL 3W, 200µm S.E.x1.0mm, 805 to 811 nm 780 to 830 C-Mount

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